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NSVF4009SG4T1G +BOM

RF Transistor for Low Noise Amplifier

NSVF4009SG4T1G General Description

The NSVF4009SG4T1G's design and construction make it an excellent choice for use in applications where low noise amplification is crucial. Its superior heat radiation characteristics ensure that it can perform reliably and consistently even in high temperature environments. This makes it a versatile and dependable option for a wide range of uses

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Key Features

  • Low-noise use : NF = 1.1 dB (typ) [f = 2 GHz]
  • High cut-off frequency : fT = 25 GHz (typ) [VCE = 3 V]
  • High gain : |S21e|2 = 17 dB (typ) [f = 2 GHz]
  • AEC-Q101 qualified and PPAP capable
  • Pb-Free, Halogen Free and RoHS compliance
  • Low operating voltage
  • MCPH4 package is pin-compatible with SC-82FL
ON Semiconductor, LLC Original Stock

Application

  • Low Noise Amplifier
ON Semiconductor, LLC Inventory

Specifications

Status Active Case Outline 419AR
MSL Temp (°C) 260 Container Type REEL
Product Category RF Bipolar Transistors Technology Si
Qualification AEC-Q101 Product Type RF Bipolar Transistors
Factory Pack Quantity 3000 Subcategory Transistors
Unit Weight 0.000233 oz

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NSVF4009SG4T1G Datasheet PDF

Preliminary Specification NSVF4009SG4T1G PDF Download

NSVF4009SG4T1G PDF Preview

In Stock: 5,449

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.390 $0.39
200+ $0.151 $30.20
500+ $0.146 $73.00
1000+ $0.143 $143.00

The prices below are for reference only.

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