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See Technical Specifications

NTD20N06 +BOM

20A N-Channel Power MOSFET with 0.046ohm impedance

Manufacturer:

ONSEMI
Mfr.Part #:

NTD20N06
Datasheet:

NTD20N06 Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Pin Count:

3
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for NTD20N06

NTD20N06 General Description

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.

Key Features

Reduced Power Loss
Faster Data Transfer Rates
Simplified Network Configuration
Larger Storage Capacity
Native HDMI Support
Easier User Interface

Application

Switching Power Supplies
Transformer Couplers
SOIC Power Modules

Specifications

Source Content uid	NTD20N06	Part Life Cycle Code	Obsolete
Pin Count	3	Reach Compliance Code	not_compliant
ECCN Code	EAR99	HTS Code	8541.29.00.95
Avalanche Energy Rating (Eas)	170 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	20 A	Drain-source On Resistance-Max	0.046 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e0	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	235	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	60 W	Pulsed Drain Current-Max (IDM)	60 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	TIN LEAD	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	20 A
Rds On - Drain-Source Resistance	37.5 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	60 W	Channel Mode	Enhancement
Fall Time	37.1 ns	Forward Transconductance - Min	13.2 S
Height	2.38 mm	Length	6.73 mm
Product Type	MOSFET	Rise Time	60.5 ns
Factory Pack Quantity	75	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	27.1 ns	Typical Turn-On Delay Time	9.5 ns
Width	6.22 mm	Unit Weight	0.011640 oz