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NTD6415ANLT4G +BOM

Single N-Channel Power MOSFET 100 V, 23 A, 56 mΩ, Logic Level, DPAK

NTD6415ANLT4G General Description

Single N-Channel Power MOSFET 100 V, 23 A, 56 mΩ, Logic Level, DPAK

Key Features

  • Economical Power Consumption
  • Robust Electrostatic Discharge
  • High Frequency Operation
  • Compact Package Design
  • Low Jitter Performance

Application

  • Home Energy Storage
  • Power Distribution Unit
  • Inverter Air Conditioning

Specifications

Source Content uid NTD6415ANLT4G Pbfree Code Yes
Part Life Cycle Code Active Pin Count 4
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 56 Weeks Avalanche Energy Rating (Eas) 79 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V Drain Current-Max (ID) 23 A
Drain-source On Resistance-Max 0.056 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 70 pF JESD-30 Code R-PDSO-G2
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 2
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 83 W
Pulsed Drain Current-Max (IDM) 80 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish MATTE TIN
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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