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See Technical Specifications

NTF2955T1G +BOM

Surface-mount device with low inductance for reduced noise

Manufacturer:

Onsemi
Mfr.Part #:

NTF2955T1G
Datasheet:

NTF2955T1G Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

0.0318
MSL Type:

1
MSL Temp (°C):

260
EDA/CAD Models:

Request Free CAD Models for NTF2955T1G

NTF2955T1G General Description

Featuring a P-channel configuration, the NTF2955T1G transistor is designed for single operation with a continuous drain current rating of -2.6A and a drain-source voltage handling capabilities of -60V. Its low ON resistance of 145mOhm ensures efficient performance with a gate-source voltage of 20V. The transistor exhibits a fall time of 38 nanoseconds and a rise time of 7.6 nanoseconds, along with turn-off delay time of 65 nanoseconds and turn-on delay time of 11 nanoseconds. Operating within a wide temperature range of -55°C to 175°C, this SOT-223 packaged component with 3 pins is ideal for SMD mounting. It is rated for MSL level-1 and is supplied in tape & reel packaging, with a maximum power dissipation of 2.3W and a reflow temperature limit of 260°C

Key Features

Compact and Low Power Consumption
Fully Compliant with UL 60950
Suitable for High Frequency Applications
High Surge Current Capability
Low ESR and Equivalent Series Resistance
Compliant to EN 60950 Safety Standard

Application

Battery Charging
DC-DC Converters
High Voltage Regulators

Specifications

Status	Active	Compliance	PbAHP
Case Outline	0.0318	MSL Type	1
MSL Temp (°C)	260	Container Type	REEL
Container Qty.	1000	ON Target	Y
Channel Polarity	P-Channel	Configuration	Single
V(BR)DSS Min (V)	-60	VGS Max (V)	20
VGS(th) Max (V)	4	ID Max (A)	-2.6
PD Max (W)	2.3	RDS(on) Max @ VGS = 10 V (mΩ)	180
Qg Typ @ VGS = 4.5 V (nC)	7.6	Qg Typ @ VGS = 10 V (nC)	14
Ciss Typ (pF)	492	Pricing ($/Unit)	$0.4521Sample