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See Technical Specifications

NTJD4105CT2G +BOM

resistance, high power efficiency, dual-channel MOSFETs, RoHS compliant

Manufacturer:

ON
Mfr.Part #:

NTJD4105CT2G
Datasheet:

NTJD4105CT2G Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

419B-02
MSL Type:

1
MSL Temp (°C):

260
EDA/CAD Models:

Request Free CAD Models for NTJD4105CT2G

NTJD4105CT2G General Description

Whether used in consumer electronics, industrial controls, or automotive applications, the NTJD4105CT2G delivers consistent performance and durability, backed by its robust construction and quality materials. By choosing this MOSFET transistor, engineers can benefit from a reliable and versatile component that meets the demands of modern electronic design, while ensuring compliance with industry standards and environmental regulations. Upgrade your circuit designs with the NTJD4105CT2G and experience enhanced efficiency and performance in your projects

Key Features

Dual Output for Separate Supplies
Compact 10-Lead Package
High Speed Data Transfer Capability
Limited EMI Generation
Ruggedized Design for Reliability

Application

Smart Home Automation
Wireless Communication Systems
Automotive Electronics

Specifications

Status	Active	Compliance	PbAHP
Case Outline	419B-02	MSL Type	1
MSL Temp (°C)	260	Container Type	REEL
Container Qty.	3000	ON Target	Y
Channel Polarity	Complementary	Configuration	Dual
V(BR)DSS Min (V)	0	VGS Max (V)	12
VGS(th) Max (V)	1.5	ID Max (A)	0.63
PD Max (W)	0.27	RDS(on) Max @ VGS = 2.5 V (mΩ)	N:445.0 , P:460.0
RDS(on) Max @ VGS = 4.5 V (mΩ)	N: 375.0, P: 300	Qg Typ @ VGS = 4.5 V (nC)	0.9
Qg Typ @ VGS = 10 V (nC)	1.3	Ciss Typ (pF)	N(20V):33, P(-8V): 160
Pricing ($/Unit)	$0.0953