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See Technical Specifications

NTJS4151PT1G +BOM

NTJS4151P: Power MOSFET 20V 4.2A 60 mOhm Single P-Channel SC-88/SC70-6/SOT-363

Manufacturer:

onsemi
Mfr.Part #:

NTJS4151PT1G
Datasheet:

NTJS4151PT1G Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

6
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for NTJS4151PT1G

NTJS4151PT1G General Description

Engineers and designers looking for a reliable P-channel MOSFET for their projects can trust the NTJS4151PT1G to deliver consistent performance and meet specifications. Whether used in power management, switching, or other applications, this MOSFET offers a balance of electrical characteristics that make it versatile and adaptable for various design requirements

Key Features

Advanced Thermal Management System
Low Temperature Coefficient for Accurate Performance
Durable Construction with Low Deflection
Compliant to Major Industry Standards and Regulations
Suitable for Medical, Consumer Electronics, and Telecommunications Applications

Application

High Performance Switch
Precision Load Regulation
Integrated Circuit Protection

Specifications

Source Content uid	NTJS4151PT1G	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	6
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	64 Weeks	Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min	20 V	Drain Current-Max (ID)	3.3 A
Drain-source On Resistance-Max	0.06 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-G6	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	6	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	P-CHANNEL	Power Dissipation-Max (Abs)	1 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	40
Transistor Application	SWITCHING	Transistor Element Material	SILICON