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NTK3139PT5G +BOM

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NTK3139PT5G General Description

MOSFET, P-CH, -20V, -0.78A, SOT-723; Transistor Polarity: P Channel; Continuous Drain Current Id: -780mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.38ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1.2V; Power Dissipation Pd: 450mW; Transistor Case Style: SOT-723; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Key Features

  • High-Efficiency Switch with Low Losses
  • Silicon-Gated with High Surge Immunity
  • Low Capacitance, Ideal for Load-Dump Protection
  • RDSON Rating up to 3.5 V
  • Compact Size, Easy Mounting
  • Pb-Free and Mercury-Free, RoHS Compliant

Application

  • Security System
  • Remote Control
  • Audio Switching

Specifications

Source Content uid NTK3139PT5G Pbfree Code Yes
Part Life Cycle Code Active Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 58 Weeks Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 20 V Drain Current-Max (ID) 0.66 A
Drain-source On Resistance-Max 0.48 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F3 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 0.55 W
Pulsed Drain Current-Max (IDM) 1.2 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish MATTE TIN
Terminal Form FLAT Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON

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