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NTMFS5C670NLT1G +BOM

NTMFS5 Series 60 V 17 A 6.1 mOhm Single N-Channel MOSFET - DFN-5

Manufacturer:

onsemi
Mfr.Part #:

NTMFS5C670NLT1G
Datasheet:

NTMFS5C670NLT1G Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99

NTMFS5C670NLT1G General Description

Meet the NTMFS5C670NLT1G MOSFET, a versatile N-channel transistor designed for high-power applications. With a continuous drain current of 71A and a drain-source voltage of 60V, this MOSFET delivers superior performance in demanding circuits. The on-resistance of 0.0051ohm and threshold voltage of 2V ensure efficient operation, while the Rds(on) test voltage of 10V provides accurate measurements for precise circuit design. Whether you're working on motor control systems, power supplies, or other high-current projects, the NTMFS5C670NLT1G offers the reliability and performance you need

Key Features

High power density capability
Low leakage current performance
Durable mechanical design
Good high-frequency performance
Precision temperature control
Excellent vibration resistance

Application

One
Two
Three

Specifications

Source Content uid	NTMFS5C670NLT1G	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	70 Weeks
Avalanche Energy Rating (Eas)	166 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	71 A	Drain-source On Resistance-Max	0.0088 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	15 pF
JESD-30 Code	R-PDSO-F5	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	5	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	61 W	Pulsed Drain Current-Max (IDM)	440 A
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	FLAT	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Element Material	SILICON