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NTR4170NT1G +BOM

N-Channel 30 V 55 mOhm 0.78 W Surface Mount Power MOSFET - SOT-23

NTR4170NT1G General Description

The NTR4170NT1G Mosfet from Onsemi is a top-of-the-line N-Channel transistor that delivers exceptional performance and reliability. Its 2.4A Continuous Drain Current capability and 30V Drain-Source Voltage make it suitable for a wide range of electronic projects. The Rds(On) of 0.045Ohm and Threshold Voltage of 1V ensure efficient operation, while the Power Rohs Compliance confirms its adherence to strict quality and sustainability standards. Whether you're designing a new circuit or upgrading an existing one, the NTR4170NT1G Mosfet is the perfect choice for your needs

Key Features

  • Precise Voltage Control
  • Low Power Consumption
  • Safe Operating Range
  • Advanced Temperature Tolerant
  • Fast Response Time
  • Reliable Operation Guaranteed

Application

  • Compact Design
  • Voltage Regulation
  • Smart Battery Technology

Specifications

Source Content uid NTR4170NT1G Pbfree Code Yes
Part Life Cycle Code Active Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 77 Weeks Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V Drain Current-Max (ID) 3.2 A
Drain-source On Resistance-Max 0.055 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB JESD-30 Code R-PDSO-G3
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.25 W Qualification Status Not Qualified
Surface Mount YES Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON

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