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NTR4503NT1G +BOM

Single N-Channel Power MOSFET 30V, 2.5A, 110mΩ

NTR4503NT1G General Description

The NTR4503NT1G is a versatile 30 V N-Channel Small Signal MOSFET that incorporates ON Semiconductor's cutting-edge Planar Technology. This technology reduces the gate charge of the MOSFET, resulting in a swift switching device that is ideal for various applications. Whether you need efficient DC to DC conversion or reliable low side power switching, this MOSFET is up to the task

Key Features

  • High Efficiency for Space-Saving Design
  • Safe Operating Area for Reliable Performance
  • Low EMI for Quiet Operation in Home Appliances
  • Faster Switching Time for High Frequency Applications
  • Robust Construction for Long Service Life
  • High Power Density for Compact Power Supplies

Application

  • Quick Charging Capability
  • Low Heat Generation

Specifications

Source Content uid NTR4503NT1G Pbfree Code Yes
Part Life Cycle Code Active Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 69 Weeks Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V Drain Current-Max (ID) 1.5 A
Drain-source On Resistance-Max 0.11 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 25 pF JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 0.73 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON

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