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See Technical Specifications

VN0106N3-G +BOM

Product Name: VN0106N3-G

Manufacturer:

Microchip
Mfr.Part #:

VN0106N3-G
Datasheet:

VN0106N3-G Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for VN0106N3-G

VN0106N3-G General Description

The VN0106N3-G transistor stands out with its innovative design that combines the best features of bipolar transistors and MOS devices. Its vertical DMOS structure, coupled with a silicon-gate manufacturing process, gives it remarkable power handling capabilities and a high input impedance. Moreover, this transistor boasts a positive temperature coefficient, making it reliable even under extreme conditions

Key Features

Improved power supply filtering
Simplified circuit design
Increased system reliability

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	350 mA	Rds On - Drain-Source Resistance	3 Ohms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	800 mV
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1 W	Channel Mode	Enhancement
Configuration	Single	Fall Time	5 ns
Forward Transconductance - Min	300 mS	Height	5.33 mm
Length	5.21 mm	Product Type	MOSFET
Rise Time	5 ns	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	FET	Typical Turn-Off Delay Time	6 ns
Typical Turn-On Delay Time	3 ns	Width	4.19 mm
Unit Weight	0.016000 oz