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VN66AFD +BOM

Only available for OEMs and CMs

VN66AFD General Description

N channel power MOSFET,VN66AFD 1.46A 60V

Key Features

  • Low On-Resistance: 1.2 Ω
  • Low Threshold: <1.6 V
  • Low Input Capacitance: 35 pF
  • Fast Switching Speed: 9 ns
  • Low Input and Output Leakage
  • BENEFITS
  • Low Offset Voltage
  • Low-Voltage Operation
  • Easily Driven Without Buffer
  • High-Speed Circuits
  • Low Error Voltage

Specifications

Part Life Cycle Code Transferred Reach Compliance Code
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V Drain Current-Max (ID) 1.46 A
Drain-source On Resistance-Max 6 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 3 A
Qualification Status Not Qualified Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON

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