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See Technical Specifications

VN10LP +BOM

Trans MOSFET N-CH 60V 0.27A 3-Pin E-Line

Manufacturer:

Diodes Incorporated
Mfr.Part #:

VN10LP
Datasheet:

VN10LP Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

compliant

VN10LP General Description

MOSFET, N E-LINE; Transistor Polarity: N Channel; Continuous Drain Current Id: 270mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 7.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 800mV; Power Dissipation

Key Features

AEC-Q101 Qualified
UL94V-0 Flammability rating
Green product

Application

Power Management

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	78 Weeks
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	0.27 A	Drain-source On Resistance-Max	5 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	5 pF
JESD-30 Code	O-PBCY-W3	JESD-609 Code	e3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	0.625 W	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	MATTE TIN
Terminal Form	WIRE	Terminal Position	BOTTOM
Time@Peak Reflow Temperature-Max (s)	30	Transistor Element Material	SILICON
Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	270 mA	Rds On - Drain-Source Resistance	5 Ohms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	800 mV
Qg - Gate Charge	-	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	625 mW
Channel Mode	Enhancement	Series	VN10
Forward Transconductance - Min	100 mS	Height	4.01 mm
Length	4.77 mm	Product	MOSFET Small Signals
Product Type	MOSFET	Factory Pack Quantity	4000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	FET	Typical Turn-Off Delay Time	10 ns
Typical Turn-On Delay Time	10 ns	Width	2.41 mm
Unit Weight	0.016000 oz