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VN10KN3-G-P014 +BOM

MOSFET, N-Channel Enhancement-Mode, 60V, 5.0 Ohm.

Manufacturer:

Microchip
Mfr.Part #:

VN10KN3-G-P014
Datasheet:

VN10KN3-G-P014 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for VN10KN3-G-P014

VN10KN3-G-P014 General Description

The VN10KN3-G-P014 is a versatile enhancement-mode transistor featuring a vertical DMOS structure and a silicon-gate manufacturing process. This design provides the device with the power handling capabilities of bipolar transistors, as well as the high input impedance and positive temperature coefficient characteristic of MOS devices. Additionally, the transistor is free from thermal runaway and thermally-induced secondary breakdown, ensuring reliable and stable performance. With its low threshold voltage, high breakdown voltage, and fast switching speeds, the VN10KN3-G-P014 is well-suited for a wide range of switching and amplifying applications

Key Features

Low on-state voltage drop and high efficiency
Rapid switching speed and high reliability
Safe operation in a wide range of temperatures

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	310 mA	Rds On - Drain-Source Resistance	7.5 Ohms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Vgs th - Gate-Source Threshold Voltage	800 mV
Qg - Gate Charge	-	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1 W
Channel Mode	Enhancement	Configuration	Single
Height	5.33 mm	Length	5.21 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Factory Pack Quantity	2000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Width	4.19 mm
Unit Weight	0.016000 oz