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VN10KN3-G-P002 +BOM

MOSFET, N-Channel Enhancement-Mode, 60V, 5.0 Ohm.

Manufacturer:

Microchip
Mfr.Part #:

VN10KN3-G-P002
Datasheet:

VN10KN3-G-P002 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for VN10KN3-G-P002

VN10KN3-G-P002 General Description

For applications that demand a high level of performance, the VN10KN3-G-P002 transistor offers the perfect combination of power handling capabilities, high input impedance, and positive temperature coefficient. Its silicon-gate manufacturing process ensures a high level of quality and reliability, while its low threshold voltage and fast switching speeds make it a versatile option for a wide range of applications. Whether used for switching or amplifying, this enhancement-mode transistor delivers consistent and dependable performance

Key Features

Ease of paralleling and low power consumption
Excellent thermal management and rugged construction

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	310 mA	Rds On - Drain-Source Resistance	7.5 Ohms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Vgs th - Gate-Source Threshold Voltage	800 mV
Qg - Gate Charge	-	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1 W
Channel Mode	Enhancement	Configuration	Single
Height	5.33 mm	Length	5.21 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Factory Pack Quantity	2000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Width	4.19 mm
Unit Weight	0.016000 oz