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VN10KN3-G-P013 +BOM

MOSFET, N-Channel Enhancement-Mode, 60V, 5.0 Ohm.

Manufacturer:

Microchip
Mfr.Part #:

VN10KN3-G-P013
Datasheet:

VN10KN3-G-P013 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for VN10KN3-G-P013

VN10KN3-G-P013 General Description

In the realm of enhancement-mode transistors, the VN10KN3-G-P013 shines as a beacon of innovation and engineering excellence. Through the utilization of a vertical DMOS structure and a state-of-the-art silicon-gate manufacturing process, this transistor achieves a perfect balance of power handling capabilities, input impedance, and temperature coefficient. Its inherent resistance to thermal issues and secondary breakdown ensures smooth and reliable operation, making it a standout choice for applications requiring superior performance and durability

Key Features

High-speed switching and low latency for fast response time
Robust electromagnetic compatibility (EMC) performance
Compliant with international safety standards for reliable use

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	310 mA	Rds On - Drain-Source Resistance	7.5 Ohms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Vgs th - Gate-Source Threshold Voltage	800 mV
Qg - Gate Charge	-	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1 W
Channel Mode	Enhancement	Configuration	Single
Height	5.33 mm	Length	5.21 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Factory Pack Quantity	2000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Width	4.19 mm
Unit Weight	0.016000 oz