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VN3205N3-G +BOM

MOSFET, N-Channel Enhancement-Mode, 50V, 0.3 Ohm.

VN3205N3-G General Description

Featuring a vertical DMOS structure and a well-proven silicon-gate manufacturing process, the VN3205N3-G transistor offers the best of both worlds - the power handling capabilities of bipolar transistors and the high input impedance of MOS devices. Its thermal stability and resistance to thermal runaway make it a reliable choice for various applications requiring high breakdown voltage, low input capacitance, and fast switching speeds

Microchip Technology, Inc Inventory

Key Features

    • High input impedance and low output noise
    • Fully compliant with industry standards and specifications
Microchip Technology, Inc Original Stock

Specifications

Product Category: MOSFET Technology: Si
Mounting Style: Through Hole Number of Channels: 1 Channel
Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 50 V
Id - Continuous Drain Current: 1.2 A Rds On - Drain-Source Resistance: 300 mOhms
Vgs th - Gate-Source Threshold Voltage: 800 mV Vgs - Gate-Source Voltage: 10 V
Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 1 W Configuration: Single
Channel Mode: Enhancement Packaging: Bulk
Height: 5.33 mm Length: 5.21 mm
Transistor Type: 1 N-Channel Type: FET
Width: 4.19 mm Forward Transconductance - Min: 1 S
Fall Time: 25 ns Product Type: MOSFET
Rise Time: 15 ns Factory Pack Quantity: 1000
Subcategory: MOSFETs Typical Turn-Off Delay Time: 25 ns
Typical Turn-On Delay Time: 10 ns Unit Weight: 0.016000 oz
Tags VN3205N3-G, VN3205N3, VN3205N, VN3205, VN320, VN32, VN3

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Ratings and Reviews

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J
J**b 06/27/2021

for honor of five star

17
M
M**e 03/27/2020

Good i get right and fast

14

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