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MOSFET, N-Channel Enhancement-Mode, 50V, 0.3 Ohm.
TO-92Manufacturer:
Mfr.Part #:
VN3205N3-G
Datasheet:
Technology:
Si
Mounting Style:
Through Hole
Number Of Channels:
1 Channel
Transistor Polarity:
N-Channel
EDA/CAD Models:
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Featuring a vertical DMOS structure and a well-proven silicon-gate manufacturing process, the VN3205N3-G transistor offers the best of both worlds - the power handling capabilities of bipolar transistors and the high input impedance of MOS devices. Its thermal stability and resistance to thermal runaway make it a reliable choice for various applications requiring high breakdown voltage, low input capacitance, and fast switching speeds
Product Category: | MOSFET | Technology: | Si |
Mounting Style: | Through Hole | Number of Channels: | 1 Channel |
Transistor Polarity: | N-Channel | Vds - Drain-Source Breakdown Voltage: | 50 V |
Id - Continuous Drain Current: | 1.2 A | Rds On - Drain-Source Resistance: | 300 mOhms |
Vgs th - Gate-Source Threshold Voltage: | 800 mV | Vgs - Gate-Source Voltage: | 10 V |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 1 W | Configuration: | Single |
Channel Mode: | Enhancement | Packaging: | Bulk |
Height: | 5.33 mm | Length: | 5.21 mm |
Transistor Type: | 1 N-Channel | Type: | FET |
Width: | 4.19 mm | Forward Transconductance - Min: | 1 S |
Fall Time: | 25 ns | Product Type: | MOSFET |
Rise Time: | 15 ns | Factory Pack Quantity: | 1000 |
Subcategory: | MOSFETs | Typical Turn-Off Delay Time: | 25 ns |
Typical Turn-On Delay Time: | 10 ns | Unit Weight: | 0.016000 oz |
Tags | VN3205N3-G, VN3205N3, VN3205N, VN3205, VN320, VN32, VN3 |
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