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High-voltage N-channel MOSFET with advanced QFET technology
TO-3PN-3Manufacturer:
Fairchild Semiconductor
Mfr.Part #:
FQA10N80C
Datasheet:
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
EDA/CAD Models:
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N-Channel 800 V 10A (Tc) 240W (Tc) Through Hole TO-3P
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800 V | Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 1.1Ohm @ 5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
Vgs (Max) | ±30V | Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 25 V |
FET Feature | - | Power Dissipation (Max) | 240W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $1.528 | $1.53 |
200+ | $0.592 | $118.40 |
500+ | $0.571 | $285.50 |
1000+ | $0.562 | $562.00 |
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