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Power MOSFET, N-Channel, QFET®, 500 V, 24 A, 200 mΩ, TO-3P
TO-3PN-3Manufacturer:
Onsemi
Mfr.Part #:
FQA24N50
Datasheet:
Technology:
Si
Mounting Style:
Through Hole
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
EDA/CAD Models:
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Thanks to its advanced planar stripe design, the FQA24N50 is able to deliver exceptional efficiency and performance, making it an ideal choice for high efficiency switch mode power supplies and power factor correction systems. Additionally, its suitability for electronic lamp ballasts based on half bridge configurations further highlights its versatility and utility in various applications
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 500 V |
Id - Continuous Drain Current | 24 A | Rds On - Drain-Source Resistance | 200 mOhms |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | Vgs th - Gate-Source Threshold Voltage | 5 V |
Qg - Gate Charge | 90 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 290 W |
Channel Mode | Enhancement | Series | FQA24N50 |
Configuration | Single | Fall Time | 155 ns |
Forward Transconductance - Min | 22 S | Height | 20.1 mm |
Length | 16.2 mm | Product Type | MOSFET |
Rise Time | 250 ns | Factory Pack Quantity | 450 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | MOSFET | Typical Turn-Off Delay Time | 200 ns |
Typical Turn-On Delay Time | 80 ns | Width | 5 mm |
Part # Aliases | FQA24N50_NL | Unit Weight | 0.162260 oz |
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