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FQA55N10 +BOM

MOSFET 100V N-Channel QFET

FQA55N10 General Description

N-Channel 100 V 61A (Tc) 190W (Tc) Through Hole TO-3P

Key Features

  • 61A, 100V, RDS(on) = 0.026Ω @VGS = 10 V
  • Low gate charge ( typical 75 nC)
  • Low Crss ( typical 130 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • 175°C maximum junction temperature rating

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 61 A Rds On - Drain-Source Resistance 26 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 190 W
Channel Mode Enhancement Configuration Single
Fall Time 140 ns Forward Transconductance - Min 39 S
Height 20.1 mm Length 16.2 mm
Product Type MOSFET Rise Time 250 ns
Factory Pack Quantity 450 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 110 ns Typical Turn-On Delay Time 25 ns
Width 5 mm Part # Aliases FQA55N10_NL
Unit Weight 0.162260 oz

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