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See Technical Specifications

FQB12P20TM +BOM

Power MOSFET, P-Channel, QFET®, -200 V, -11.5 A, 470 mΩ, D2PAK

Manufacturer:

onsemi
Mfr.Part #:

FQB12P20TM
Datasheet:

FQB12P20TM Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FQB12P20TM

FQB12P20TM General Description

This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Key Features

-11.5A, -200V, R_DS(on) = 470mΩ(Max.) @V_GS = -10 V, I_D = -5.75A
Low gate charge ( Typ. 31nC)
Low C_rss ( Typ. 30pF)
100% avalanche tested
RoHS Compliant

Application

Other Industrial

Specifications

Source Content uid	FQB12P20TM	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	40 Weeks
Additional Feature	FAST SWITCHING	Avalanche Energy Rating (Eas)	810 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	200 V	Drain Current-Max (ID)	11.5 A
Drain-source On Resistance-Max	0.47 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-263AB	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	245	Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	120 W	Pulsed Drain Current-Max (IDM)	46 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON