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FQD30N06L +BOM

TO-252 DPAK-3 Package FET

Key Features

  • 24A, 60V, RDS(on) = 0.039Ω @ VGS = 10V
  • Low gate charge ( typical 15 nC)
  • Low Crss ( typical 50 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • 150°C maximum junction temperature rating
  • Low level gate drive requirements allowing direct operation form logic drivers
  • RoHS Compliant

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 24 A Rds On - Drain-Source Resistance 39 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.5 W
Channel Mode Enhancement Series FQD30N06
Configuration Single Fall Time 110 ns
Height 2.39 mm Length 6.73 mm
Product Type MOSFET Rise Time 210 ns
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 55 ns Typical Turn-On Delay Time 15 ns
Width 6.22 mm Unit Weight 0.011640 oz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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