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FQN1N60CTA +BOM

Product code FQN1N60CTA

FQN1N60CTA General Description

The FQN1N60CTA MOSFET is engineered to excel in a variety of power electronics applications, thanks to its specialized design and cutting-edge technology. This device is particularly well-suited for applications requiring efficient power conversion and reliable performance. With its superior switching characteristics and high avalanche energy strength, it offers the precision and durability needed for demanding tasks such as active power factor correction and electronic lamp ballasts

Key Features

  • High speed switching
  • Low power consumption
  • Rapid current turn-off

Application

  • Home decor
  • Furniture
  • Bedding

Specifications

Source Content uid FQN1N60CTA Pbfree Code Yes
Part Life Cycle Code Obsolete Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 4 Weeks
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 0.3 A Drain-source On Resistance-Max 11.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 6 pF
JEDEC-95 Code TO-92 JESD-30 Code O-PBCY-T3
JESD-609 Code e3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3 W Qualification Status Not Qualified
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE Terminal Position BOTTOM
Transistor Application SWITCHING Transistor Element Material SILICON

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