Payment Method
FQPF11N40C +BOM
Power Field-Effect Transistor for High Current Applications
TO-220-3-
Manufacturer:
Onsemi
-
Mfr.Part #:
FQPF11N40C
-
Datasheet:
-
Technology:
Si
-
Mounting Style:
Through Hole
-
Transistor Polarity:
N-Channel
-
Number Of Channels:
1 Channel
-
EDA/CAD Models:
Send all BOMs to [email protected], or fill out the form below for a quote on FQPF11N40C. Guaranteed response within 12hr.
Availability: 4606 PCS
Please fill in the short form below and we will provide you the quotation immediately.
FQPF11N40C General Description
Designed for efficiency and performance, the FQPF11N40C power MOSFET combines advanced technology with superior construction. ON Semiconductor's expertise in semiconductor solutions is evident in the design and functionality of this device, which offers low on-state resistance and high switching performance. The FQPF11N40C is a versatile component suitable for a wide range of applications, including power factor correction and lighting ballasts, where reliability and precision are essential
Key Features
- Fast and accurate thermal shutdown protection
- Internal fault protection circuitry included
- Silicon-controlled rectifier with high surge current
- High-speed switching with low gate charge
- Pulse-by-pulse current limiting enabled
- Low capacitance to ground for better noise immunity
Application
- Great Value
- Must-Have Item
Specifications
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 400 V |
Id - Continuous Drain Current | 11 A | Rds On - Drain-Source Resistance | 530 mOhms |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 35 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 44 W |
Channel Mode | Enhancement | Tradename | QFET |
Series | FQPF11N40C | Configuration | Single |
Fall Time | 81 ns | Forward Transconductance - Min | 7.1 S |
Height | 16.07 mm | Length | 10.36 mm |
Product Type | MOSFET | Rise Time | 89 ns |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 81 ns | Typical Turn-On Delay Time | 14 ns |
Width | 4.9 mm | Part # Aliases | FQPF11N40C_NL |
Unit Weight | 0.068784 oz |
Service Policies and Others
After-Sales & Settlement Related
For alternative payment channels, please reach out to us at:
[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
365-Day Product
Quality Guarantee
We promise to provide 365 days quality assurance service for all our products.
In Stock: 4,606
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices below are for reference only.
Featured Products
Top Sellers
-
2N2222
Stmicroelectronics
1000+ $0.587
-
BC547
Onsemi
NPN Epitaxial Silicon Transistor
-
ULN2003
Onsemi
Versatile device for driving heavy loads and motor
-
IRF3205
Infineon
TO-220AB Tube Power Transistor with N-Channel Silicon
-
TAN15
Microchip
The TAN is a robust NPN transistor designed for high-frequency applications, capable of operating at up to V and continuous curren