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See Technical Specifications

FQPF4N60 +BOM

High-power switching device for efficient DC-DC conversio

Manufacturer:

Fairchild Semiconductor
Mfr.Part #:

FQPF4N60
Datasheet:

FQPF4N60 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Avalanche Energy Rating (Eas):

260 mJ
EDA/CAD Models:

Request Free CAD Models for FQPF4N60

FQPF4N60 General Description

Product FQPF4N60 is a high-performance N-channel MOSFET suitable for demanding applications requiring high power capabilities. With a VDSS of 600V and a continuous drain current of 4A, this MOSFET offers reliable performance in various scenarios. Its low gate charge enables quick switching speeds and reduces power losses, enhancing overall efficiency. The low on-state resistance of 1.5 ohms helps minimize power dissipation, making it an excellent choice for power-sensitive applications

Key Features

2.6A, 600V, RDS(on) = 2.2Ω @VGS = 10 V
Low gate charge ( typical 15 nC)
Low Crss ( typical 8.0 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code
Avalanche Energy Rating (Eas)	260 mJ	Case Connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	600 V
Drain Current-Max (ID)	2.6 A	Drain-source On Resistance-Max	2.2 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Moisture Sensitivity Level	NOT APPLICABLE
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Peak Reflow Temperature (Cel)	NOT APPLICABLE
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	10.4 A
Qualification Status	COMMERCIAL	Surface Mount	NO
Terminal Finish	MATTE TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	NOT APPLICABLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON