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FQPF6N60C +BOM

600V 5.5A N-Channel MOSFET Transistor FQPF6N60C by Fairchild in TO-220F Package

FQPF6N60C General Description

N-Channel 600 V 5.5A (Tc) 40W (Tc) Through Hole TO-220F-3

Key Features

5.5A, 600V, RDS(on) = 2.0 @VGS = 10 V

Low gate charge ( typical 16 nC)

Low Crss ( typical 7 pF)

Fast switching

100% avalanche tested

Improved dv/dt capabilit

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 5.5 A Rds On - Drain-Source Resistance 2 Ohms
Vgs - Gate-Source Voltage - 30 V, + 30 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 40 W
Channel Mode Enhancement Series FQPF6N60C
Configuration Single Fall Time 45 ns
Forward Transconductance - Min 4.8 S Height 16.3 mm
Length 10.67 mm Product Type MOSFET
Rise Time 45 ns Factory Pack Quantity 50
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-Off Delay Time 45 ns
Typical Turn-On Delay Time 15 ns Width 4.7 mm
Part # Aliases FQPF6N60C_NL Unit Weight 0.068784 oz

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In Stock: 4,475

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Qty. Unit Price Ext. Price
1+ $1.639 $1.64
200+ $0.636 $127.20
500+ $0.613 $306.50
1000+ $0.601 $601.00

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