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IGBT Transistors for TrenchStop
PG-TO247-3Manufacturer:
Infineon
Mfr.Part #:
IKW60N60H3FKSA1
Datasheet:
FunctionalPacking:
TUBE
AddProductInfo:
RoHS compliant, non dry
Msl:
NA
HalogenFree:
undefined
EDA/CAD Models:
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As a member of Infineon Technologies' esteemed CoolMOS™ superjunction MOSFET series, the IKW60N60H3FKSA1 sets the bar for high-performance N-channel enhancement mode power MOSFET transistors. Featuring a 600V drain-source voltage rating and a continuous drain current of 60A, this transistor is well-equipped to handle a broad spectrum of power electronics applications with ease. Its impressively low on-state resistance of 0.13 ohms ensures maximal efficiency and minimized power dissipation, making it a standout choice for projects where energy efficiency is paramount. By leveraging advanced superjunction technology, the IKW60N60H3FKSA1 delivers superior thermal performance, reduced switching losses, and enhanced reliability compared to conventional MOSFETs. These features make it a compelling option for high-power applications where performance and dependability are non-negotiable. Housed in a TO-247 package, this transistor offers outstanding thermal conductivity and mechanical strength for effortless and secure mounting. Moreover, integrated ESD protection enhances its ruggedness in challenging operating conditions. In summary, the IKW60N60H3FKSA1 represents a pinnacle of innovation in the realm of power MOSFET transistors, offering unmatched performance, efficiency, and reliability for the most demanding engineering and design challenges
functionalPacking | TUBE | addProductInfo | RoHS compliant, non dry |
msl | NA | halogenFree | undefined |
customerInfo | STANDARD | fgr | S49 |
productClassification | ASP | productStatusInfo | active |
hfgr | K | pbFree | yes |
moistureProtPack | NON DRY | orderingCode | SP000919762 |
opn | IKW60N60H3FKSA1 | completelyPbFree | yes |
sapMatnrSali | SP000919762 |
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