This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

NJD35N04G +BOM

4.0 A, 350 V NPN Darlington Bipolar Power Transistor

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

NJD35N04G
Datasheet:

NJD35N04G Datasheet (PDF)
Case Outline:

369C
MSL Temp (°C):

260
Container Type:

TUBE
Configuration:

Single
EDA/CAD Models:

Request Free CAD Models for NJD35N04G

NJD35N04G General Description

Meet the NJD35N04G: a specialized bipolar power Darlington transistor engineered to excel in inductive applications such as electronic ignition, switching regulators, and motor control. With a focus on high voltage tolerance and efficient power handling, this transistor is specifically designed to meet the demands of modern electronic systems in industries ranging from automotive to industrial automation. Its rugged construction and advanced design make it a reliable choice for applications requiring precision control and reliable operation in the face of challenging inductive loads

Key Features

Excellent Dynamic Response
Low Noise and Distortion
Safe Operating Area Expansion

Application

Audio Amplifier
Security System

Specifications

Status	Active	Case Outline	369C
MSL Temp (°C)	260	Container Type	TUBE
Product Category	Darlington Transistors	Configuration	Single
Transistor Polarity	NPN	Collector- Emitter Voltage VCEO Max	350 V
Emitter- Base Voltage VEBO	5 V	Collector- Base Voltage VCBO	700 V
Maximum DC Collector Current	4 A	Mounting Style	SMD/SMT
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 150 C
Series	NJD35N04	DC Collector/Base Gain hfe Min	2000, 300
Height	2.38 mm	Length	6.73 mm
Product Type	Darlington Transistors	Factory Pack Quantity	75
Subcategory	Transistors	Width	6.22 mm
Unit Weight	0.015027 oz