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See Technical Specifications

NJD35N04T4G +BOM

Power Darlington Transistors NPN

Manufacturer:

Onsemi
Mfr.Part #:

NJD35N04T4G
Datasheet:

NJD35N04T4G Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

369C
MSL Type:

1
MSL Temp (°C):

260
EDA/CAD Models:

Request Free CAD Models for NJD35N04T4G

NJD35N04T4G General Description

The NJD35N04T4G is a versatile dual NPN transistor array with a high collector-emitter voltage rating of 350V and a power dissipation of 45W. Its TO-252 package style and 3-pin configuration make it easy to integrate into your electronic designs, while its high DC collector current rating of 4A and DC current gain of 300hFE ensure reliable performance in power control applications. With an operating temperature range of up to 150°C, this transistor is suitable for use in automotive and industrial settings. The NJD35N04T4G also meets MSL 1 - Unlimited standards for moisture sensitivity and is free from lead (Pb), meeting environmental regulations. Whether you're working on a new project or replacing transistors in an existing circuit, the NJD35N04T4G offers the performance and reliability you need

Key Features

This is an N-channel power MOSFET for efficient power handling
ON Semiconductor's NJD35N04T4G is designed for high-power applications

Application

Inverter Circuits
Solar Panels
Electric Tools

Specifications

Status	Active	Compliance	PbAHP
Case Outline	369C	MSL Type	1
MSL Temp (°C)	260	Container Type	REEL
Container Qty.	2500	ON Target	N
Polarity	NPN	IC Continuous (A)	4
V(BR)CEO Min (V)	350	VCE(sat) Max (V)	1.5
hFE Min (k)	2	fT Min (MHz)	90
Pricing ($/Unit)	$0.5172