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See Technical Specifications

NJT4030PT3G +BOM

Bipolar Power Transistors, PNP, 3.0 A, 40 V

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

NJT4030PT3G
Datasheet:

NJT4030PT3G Datasheet (PDF)
Transistor Type:

PNP
Current - Collector (Ic) (Max):

3 A
Voltage - Collector Emitter Breakdown (Max):

40 V
Vce Saturation (Max) @ Ib, Ic:

500mV @ 300mA, 3A
EDA/CAD Models:

Request Free CAD Models for NJT4030PT3G

NJT4030PT3G General Description

The NJT4030PT3G is sure to impress with its impressive features that cater to the needs of modern electronic applications. Its low saturation voltage ensures minimal power loss, while its high gain ensures reliable operation in high-speed switching scenarios. This transistor is a game-changer for those looking to optimize their devices for energy efficiency without sacrificing performance

Key Features

Reduced Thermal Runaway
Improved Transient Response
Low Quiescent Current Draw
Compliance with IEC 61131-2 Standard

Application

Reliable power management
High-output driver
Integrated switching circuit

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	-
Transistor Type	PNP	Current - Collector (Ic) (Max)	3 A
Voltage - Collector Emitter Breakdown (Max)	40 V	Vce Saturation (Max) @ Ib, Ic	500mV @ 300mA, 3A
Current - Collector Cutoff (Max)	100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 1A, 1V
Power - Max	2 W	Frequency - Transition	160MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	NJT4030