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See Technical Specifications

NJT4031NT1G +BOM

3.0 A, 40 V NPN Bipolar Power Transistor

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

NJT4031NT1G
Datasheet:

NJT4031NT1G Datasheet (PDF)
Case Outline:

0.0318
MSL Temp (°C):

260
Container Type:

REEL
Mounting Style:

SMD/SMT
EDA/CAD Models:

Request Free CAD Models for NJT4031NT1G

NJT4031NT1G General Description

TRANSISTOR, BIPOL, NPN, 40V; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 215MHz; Power Dissipation Pd: 2W; DC Collector Current: 3A; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 3 - 168 hours; SVHC: Lead (27-Jun-2018)

Key Features

Safe-Area Testing Available
Burn-In Testing Available
Lead-Free and RoHS Compliant
AEC-Q100 Qualified

Application

Fast charging
Smart power management
Energy efficient

Specifications

Status	Active	Case Outline	0.0318
MSL Temp (°C)	260	Container Type	REEL
Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	40 V	Collector- Base Voltage VCBO	40 V
Emitter- Base Voltage VEBO	6 V	Collector-Emitter Saturation Voltage	300 mV
Maximum DC Collector Current	3 A	Pd - Power Dissipation	2 W
Gain Bandwidth Product fT	215 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	NJT4031N
DC Collector/Base Gain hfe Min	220	Height	1.57 mm
Length	6.5 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	1000	Subcategory	Transistors
Technology	Si	Width	3.5 mm
Unit Weight	0.003951 oz