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See Technical Specifications

NJVMJK31CTWG +BOM

Power Transistor 100 V, 3 A Dual General Purpose NPN

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

NJVMJK31CTWG
Datasheet:

NJVMJK31CTWG Datasheet (PDF)
Series:

Automotive, AEC-Q101
Current - Collector (Ic) (Max):

3A
Voltage - Collector Emitter Breakdown (Max):

100V
Vce Saturation (Max) @ Ib, Ic:

1.2V @ 375mA, 3A

NJVMJK31CTWG General Description

III. The NJVMJK31CTWG Bipolar Junction Transistor is a top-of-the-line component designed for general purpose power and switching applications. Its advanced LFPAK package (5 x 6 mm) provides exceptional thermal conduction, making it an ideal choice for regulators, converters, power amplifiers, and automotive applications like air bag deployment, power train control units, and instrument clusters. With its high-performance capabilities, this transistor is a reliable and versatile solution for a wide range of industrial and automotive needs

Key Features

Complementary NPN: MJK31C
NJV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC−Q101Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant

Application

Automotive ECU's

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar Transistor Arrays	Series	Automotive, AEC-Q101
Current - Collector (Ic) (Max)	3A	Voltage - Collector Emitter Breakdown (Max)	100V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 375mA, 3A	Current - Collector Cutoff (Max)	50µA
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 1A, 4V	Power - Max	2.7W
Frequency - Transition	3MHz	Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	NJVMJK31