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See Technical Specifications

NJVMJD47T4G +BOM

1.0 A, 250 V High Voltage NPN Bipolar Power Transistor

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

NJVMJD47T4G
Datasheet:

NJVMJD47T4G Datasheet (PDF)
Transistor Type:

NPN
Current - Collector (Ic) (Max):

1 A
Voltage - Collector Emitter Breakdown (Max):

250 V
Vce Saturation (Max) @ Ib, Ic:

1V @ 200mA, 1A
EDA/CAD Models:

Request Free CAD Models for NJVMJD47T4G

NJVMJD47T4G General Description

The NPN Bipolar Power Transistor is a versatile component specifically tailored for various applications in line-operated audio output amplifiers, SWITCHMODE power supply drivers, and other switching applications. Its design is optimized to deliver high performance and efficiency in these specific scenarios, making it an ideal choice for electronic engineers and enthusiasts looking to enhance the functionality of their projects. With its robust construction and reliable operation, this transistor is sure to meet the demands of demanding applications without compromising on quality or performance

Key Features

Unique NJV Prefix for Automotive and Specialized Sites
Fully Pb-Free and Lead-Free in Construction
Operates with 250V to 400V Min V_CEO(sus)

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	-
Transistor Type	NPN	Current - Collector (Ic) (Max)	1 A
Voltage - Collector Emitter Breakdown (Max)	250 V	Vce Saturation (Max) @ Ib, Ic	1V @ 200mA, 1A
Current - Collector Cutoff (Max)	200µA	DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 300mA, 10V
Power - Max	1.56 W	Frequency - Transition	10MHz
Operating Temperature	-65°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	NJVMJD47