This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

NSS30100LT1G +BOM

Low VCE(sat) Transistor, PNP, 30 V, 1.0 A

Manufacturer:

onsemi
Mfr.Part #:

NSS30100LT1G
Datasheet:

NSS30100LT1G Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for NSS30100LT1G

NSS30100LT1G General Description

The NSS30100LT1G is a cutting-edge product designed for optimal energy control in low voltage, high-speed switching applications. With its ultra-low saturation voltage VCE(sat) and high current gain capability, this miniature surface mount device offers unparalleled efficiency at an affordable price point. Ideal for use in a variety of settings where efficient energy management is crucial, this transistor is a game-changer in the world of electronics

Key Features

Low Power Consumption, High Speed
Rapid Switching Time, Low VCEsat
High Gain Bandwidth, Small Package Size

Application

Regulating voltage levels
Charging batteries efficiently

Specifications

Source Content uid	NSS30100LT1G	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	3
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	4 Weeks	Collector Current-Max (IC)	1 A
Collector-Emitter Voltage-Max	30 V	Configuration	SINGLE
DC Current Gain-Min (hFE)	40	JEDEC-95 Code	TO-236
JESD-30 Code	R-PDSO-G3	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	PNP
Power Dissipation-Max (Abs)	0.71 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	40	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Transition Frequency-Nom (fT)	100 MHz