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NSV60600MZ4T1G +BOM

PNP Transistor with Low VCE(sat) Rating of 60 V and 6.0 A

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

NSV60600MZ4T1G
Datasheet:

NSV60600MZ4T1G Datasheet (PDF)
Transistor Type:

PNP
Current - Collector (Ic) (Max):

6 A
Voltage - Collector Emitter Breakdown (Max):

60 V
Vce Saturation (Max) @ Ib, Ic:

350mV @ 600mA, 6A
EDA/CAD Models:

Request Free CAD Models for NSV60600MZ4T1G

NSV60600MZ4T1G General Description

Designed for high-speed switching applications where power saving is a top concern, the NSV60600MZ4T1G Bipolar Transistor offers exceptional performance and efficiency. Its low saturation voltage means that it can handle high currents without wasting excess energy, making it an excellent choice for applications that require fast response times and minimal power consumption. With its high gain, this transistor provides precise control over the output signal, ensuring reliable operation in a variety of circuit designs. Whether you are building a new prototype or upgrading an existing system, this transistor is sure to meet your needs for high-speed switching and power efficiency

Key Features

Ultra-Fast Turn-On Time
Robust Overvoltage Protection
Superior Power Factor Correction
AECQ101 Qualified for Automotive Use

Application

Efficient energy conversion
Stable voltage output
Compact power solution

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	-
Transistor Type	PNP	Current - Collector (Ic) (Max)	6 A
Voltage - Collector Emitter Breakdown (Max)	60 V	Vce Saturation (Max) @ Ib, Ic	350mV @ 600mA, 6A
Current - Collector Cutoff (Max)	100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1A, 2V
Power - Max	800 mW	Frequency - Transition	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	NSV60600