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See Technical Specifications

PSMN075-100MSE +BOM

Power Field-Effect Transistor, 18A I(D), 100V, 0.071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer:

NXP
Mfr.Part #:

PSMN075-100MSE
Datasheet:

PSMN075-100MSE Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

25 mJ

PSMN075-100MSE General Description

New standards and proprietary approaches are enabling the next generation of Power-over-Ethernet (PoE) systems capable of delivering up to 100 W to each powered device (PD). Large screen LCD displays, 3G / 4G / Wi-Fi hot-spots and pan-tilt-zoom CCTV cameras, for example, are placing increased demands on the power sourcing equipment (PSE) in terms of “soft-start” procedures, resilience to short-circuits, thermal management and power density. Part of Nexperia’s “NextPower Live” MOSFET portfolio, the PSMN075-100MSE has been designed specifically to compliment the latest PoE controllers, offering both superior linear mode operation and very low R in a cost-effective, industry compatible, LFPAK33 package.

Key Features

Enhanced forward biased safe operating area for superior linear mode operation
Low Rdson for low conduction losses
Ultra reliable LFPAK33 package – no glue, no wires, 175°C
Very low IDSS

Application

IEEE802.3at and proprietary solutions - (type 2)
Suitable for PoE applications upto 30W
Use PSMN040-100MSE for higher power requirements

Specifications

Source Content uid	PSMN075-100MSE	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	25 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	18 A	Drain-source On Resistance-Max	0.071 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PSSO-G4
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	4
Operating Mode	ENHANCEMENT MODE	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	74 A
Reference Standard	IEC-60134	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Ratings and Reviews

I**c 05/02/2024

Super came quickly, did not check

G**n 04/16/2024

For Order No: 100887958010879 Order Closed: 29 Apr 2019 21:10 Seller: ModuleFans the product is TPA3116 D2 TPA3116DA DC 12V 24V 100W Mono Channel Digital Power Audio Amplifier Board TPA3116D2 Large Capacity Board=10 pcs.-I have received enough product.-The seller side told me the time of delivery from the very beginning to my country. This makes it very easy and confident.-About the goods sent is faster than expected.Thank you very much.

M**n 04/02/2022

The product is very high quality but the time of departure and waiting is very long

J**n 05/09/2020

I am highly impressed with the delivery speed of Avaq. They were incredibly fast and efficient. Great job!