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See Technical Specifications

PSMN1R8-40YLC +BOM

100A, 40V, 0.0021ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, POWER-SO8, LFPAK-4

Manufacturer:

NXP
Mfr.Part #:

PSMN1R8-40YLC
Datasheet:

PSMN1R8-40YLC Datasheet (PDF)
Part Life Cycle Code:

Transferred
ECCN Code:

EAR99
Additional Feature:

HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas):

248 mJ

PSMN1R8-40YLC General Description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Key Features

High reliability Power SO8 package, qualified to 175°C
Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads
Ultra low Rdson and low parasitic inductance

Application

DC-to-DC converters
Load switching
Power OR-ing
Server power supplies
Sync rectifier

Specifications

Source Content uid	PSMN1R8-40YLC	Part Life Cycle Code	Transferred
Reach Compliance Code		ECCN Code	EAR99
Additional Feature	HIGH RELIABILITY, ULTRA-LOW RESISTANCE	Avalanche Energy Rating (Eas)	248 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	40 V	Drain Current-Max (ID)	100 A
Drain-source On Resistance-Max	0.0021 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	MO-235	JESD-30 Code	R-PSSO-G4
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	4	Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	1128 A
Reference Standard	IEC-60134	Surface Mount	YES
Terminal Finish	PURE TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON