This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

SBC847BPDW1T1G +BOM

Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Manufacturer:

onsemi
Mfr.Part #:

SBC847BPDW1T1G
Datasheet:

SBC847BPDW1T1G Datasheet (PDF)
Transistor Type:

1 NPN, 1 PNP
Current - Collector (Ic) (Max):

100mA
Voltage - Collector Emitter Breakdown (Max):

45V
Vce Saturation (Max) @ Ib, Ic:

600mV @ 5mA, 100mA
EDA/CAD Models:

Request Free CAD Models for SBC847BPDW1T1G

SBC847BPDW1T1G General Description

Whether you're working on a prototype or a production-level project, the SBC847BPDW1T1G can meet your requirements for efficient amplification and signal processing. Its robust design and high-quality construction ensure long-term performance and stability, even under demanding operating conditions. By choosing this Co-packaged Bipolar Junction Transistor, you can benefit from a reliable and versatile solution that enhances the functionality of your electronic devices

Key Features

Advanced Quality Control Measures Ensure High Reliability
Dual-Channel Architecture Enables Faster Processing
Sophisticated Power Management System Minimizes Heat Generation
Embedded Flash Memory Stores Critical Firmware and Data
Precise Timing and Synchronization Ensure Smooth Operations
Enhanced Security Features Protect Against Unauthorized Access

Specifications

Transistor Type	1 NPN, 1 PNP	Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	45V	Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 5V
Power - Max	380mW	Frequency - Transition	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Grade	Automotive
Qualification	AEC-Q101	Mounting Type	Surface Mount
Base Product Number	SBC847