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See Technical Specifications

SBC856BWT1G +BOM

PNP Bipolar Transistor

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

SBC856BWT1G
Datasheet:

SBC856BWT1G Datasheet (PDF)
Series:

Automotive, AEC-Q101
Transistor Type:

PNP
Current - Collector (Ic) (Max):

100 mA
Voltage - Collector Emitter Breakdown (Max):

65 V
EDA/CAD Models:

Request Free CAD Models for SBC856BWT1G

SBC856BWT1G General Description

The SBC856BWT1G, an NPN Bipolar Transistor, is a versatile component ideal for a wide range of amplifier applications. With its compact SOT-323/SC-70 package, it is perfect for low power surface mount setups where space is limited. Whether you need to amplify audio signals, control motor speed, or amplify weak signals, this transistor is up to the task

Key Features

RoHS Compliant and Halogen Free
Packages Available for High Reliability Applications
AEC-Q100 Qualified and PPAP Capable for Automotive Use
SMT and Thru-Hole Packaging Options Available
Automotive Grade Material Used for High Temperature Applications
Lead-Free and Halogen-Free Packages for ECO-Friendly Designs

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	Automotive, AEC-Q101
Transistor Type	PNP	Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	65 V	Vce Saturation (Max) @ Ib, Ic	650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	220 @ 2mA, 5V
Power - Max	150 mW	Frequency - Transition	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	SBC856	Product Category	Bipolar Transistors - BJT
Mounting Style	SMD/SMT	Transistor Polarity	PNP
Configuration	Single	Collector- Emitter Voltage VCEO Max	65 V
Collector- Base Voltage VCBO	80 V	Emitter- Base Voltage VEBO	5 V
Collector-Emitter Saturation Voltage	650 mV	Maximum DC Collector Current	100 mA
Pd - Power Dissipation	150 mW	Gain Bandwidth Product fT	100 MHz
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Qualification	AEC-Q101	Continuous Collector Current	- 100 mA
DC Collector/Base Gain hfe Min	220	DC Current Gain hFE Max	475
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	3000
Subcategory	Transistors	Technology	Si
Unit Weight	0.000219 oz