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SBCP56-16T1G +BOM

1.0 A, 80 V NPN Bipolar Junction Transistor

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

SBCP56-16T1G
Datasheet:

SBCP56-16T1G Datasheet (PDF)
Case Outline:

0.0318
MSL Temp (°C):

260
Container Type:

REEL
Mounting Style:

SMD/SMT
EDA/CAD Models:

Request Free CAD Models for SBCP56-16T1G

SBCP56-16T1G General Description

Whether used in high voltage switching applications or battery-powered devices, the SBCP56-16T1G delivers on its promise of quality and efficiency. Its RoHS compliance ensures that it meets environmental standards, while its low leakage current makes it a cost-effective solution for energy-conscious designs. This transistor stands out for its high reliability and industry-standard performance, making it a preferred choice for engineers and designers alike

Key Features

Automotive Qualified IC Only
Solderable SOT-223 Package Available
Thermal Stress Resistance Enhanced
AEC-Q101 Qualified and PPAP Capable
No Mercury Contamination Guaranteed
Fully RoHS Compliant Device

Application

RFID technology
Power distribution systems
Electronic toll collection

Specifications

Status	Active	Case Outline	0.0318
MSL Temp (°C)	260	Container Type	REEL
Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	80 V	Collector- Base Voltage VCBO	100 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	500 mV
Maximum DC Collector Current	1 A	Pd - Power Dissipation	1.5 W
Gain Bandwidth Product fT	130 MHz	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C	Qualification	AEC-Q101
Series	SBCP56	Continuous Collector Current	1 A
DC Collector/Base Gain hfe Min	25	DC Current Gain hFE Max	250 mA
Height	1.75 mm	Length	6.7 mm
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	1000
Subcategory	Transistors	Technology	Si
Width	3.7 mm	Unit Weight	0.003951 oz