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See Technical Specifications

FQA28N15 +BOM

Power MOSFET, N-Channel, QFET®, 150V, 33A, 90mΩ, TO-3P

Manufacturer:

onsemi
Mfr.Part #:

FQA28N15
Datasheet:

FQA28N15 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FQA28N15

FQA28N15 General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Key Features

30mA Forward Current
20V Reverse Voltage Rating
150°C Maximum Junction Temperature

Application

Superior Amplification Technology
Premium Power Efficiency
Innovative Switching Solutions

Specifications

Source Content uid	FQA28N15	Pbfree Code	Yes
Part Life Cycle Code	Obsolete	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	11 Weeks, 4 Days
Additional Feature	FAST SWITCHING	Avalanche Energy Rating (Eas)	300 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	150 V
Drain Current-Max (ID)	33 A	Drain-source On Resistance-Max	0.09 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	227 W	Pulsed Drain Current-Max (IDM)	132 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	MATTE TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON