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Power MOSFET, P-Channel, QFET®, -60 V, -12 A, 135 mΩ, DPAK
DPAKManufacturer:
Mfr.Part #:
FQD17P06TM
Datasheet:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Reach Compliance Code:
not_compliant
ECCN Code:
EAR99
EDA/CAD Models:
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The FQD17P06TM MOSFET utilizes a proprietary planar stripe and DMOS technology to deliver reduced on-state resistance and superior switching performance. This makes it perfect for applications such as switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications. Its advanced technology and high performance make it an excellent choice for a wide range of projects
Source Content uid | FQD17P06TM | Pbfree Code | Yes |
Part Life Cycle Code | Active | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 17 Weeks, 3 Days |
Avalanche Energy Rating (Eas) | 300 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (ID) | 12 A | Drain-source On Resistance-Max | 0.135 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-252 |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | P-CHANNEL | Power Dissipation-Max (Abs) | 44 W |
Pulsed Drain Current-Max (IDM) | 48 A | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | Matte Tin (Sn) - annealed |
Terminal Form | GULL WING | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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