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See Technical Specifications

FQD6N40CTM +BOM

N-Channel 400 V 4.5A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount TO-252AA

Manufacturer:

onsemi
Mfr.Part #:

FQD6N40CTM
Datasheet:

FQD6N40CTM Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FQD6N40CTM

FQD6N40CTM General Description

The FQD6N40CTM is a high-performance N-Channel power MOSFET designed for a variety of applications where efficiency and reliability are key. Utilizing a cutting-edge planar stripe and DMOS technology, this MOSFET boasts reduced on-state resistance and exceptional switching performance. Its high avalanche energy strength ensures that it can withstand demanding operating conditions, making it a versatile choice for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts

Key Features

Fast response time
High surge current rating
Low thermal resistance
Epoxy encapsulation ensures durability

Application

Ideal for high voltage circuits
Applications in motor control
Efficient power handling

Specifications

Source Content uid	FQD6N40CTM	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	69 Weeks
Additional Feature	FAST SWITCHING	Avalanche Energy Rating (Eas)	270 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	400 V	Drain Current-Max (ID)	4.5 A
Drain-source On Resistance-Max	1 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252AA	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	48 W	Pulsed Drain Current-Max (IDM)	18 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON