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FQD7N20TM +BOM

DPAK-packaged N-channel MOSFET designed for switching applications, featuring a maximum voltage rating of 200V and a current handling capability of 5

FQD7N20TM General Description

N-Channel 200 V 5.3A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount TO-252AA

Key Features

  • 5.3A, 200V, RDS(on) = 0.69Ω @VGS = 10 V
  • Low gate charge ( typical 8.0 nC)
  • Low Crss ( typical 9.0 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Specifications

FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V Current - Continuous Drain (Id) @ 25°C 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 690mOhm @ 2.65A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 25 V
FET Feature - Power Dissipation (Max) 2.5W (Ta), 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount

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