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See Technical Specifications

FQP19N20C +BOM

Power MOSFET, N-Channel, QFET®, 200 V, 19 A, 170 mΩ, TO-220

Manufacturer:

onsemi
Mfr.Part #:

FQP19N20C
Datasheet:

FQP19N20C Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

End Of Life
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FQP19N20C

FQP19N20C General Description

The FQP19N20C is a high-quality N-Channel enhancement mode power MOSFET that stands out for its exceptional performance and robust design. Thanks to ON Semiconductor's proprietary planar stripe and DMOS technology, this MOSFET delivers superior switching performance and high avalanche energy strength, making it an excellent choice for a wide range of power electronics applications

Key Features

Compact module size
High power density
Minimal thermal run-up
Improved power factor
Silicon carbide substrate
Voltage regulation circuitry

Application

Professional audio features
Easy to install
Dimmable lights

Specifications

Source Content uid	FQP19N20C	Pbfree Code	Yes
Part Life Cycle Code	End Of Life	Reach Compliance Code	not_compliant
ECCN Code	EAR99	HTS Code	8541.29.00.95
Factory Lead Time	77 Weeks, 4 Days	Avalanche Energy Rating (Eas)	433 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	200 V
Drain Current-Max (ID)	19 A	Drain-source On Resistance-Max	0.17 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-220AB
JESD-30 Code	R-PSFM-T3	JESD-609 Code	e3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	139 W
Pulsed Drain Current-Max (IDM)	76 A	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	MATTE TIN
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	200 V	Id - Continuous Drain Current	19 A
Rds On - Drain-Source Resistance	170 mOhms	Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	2 V	Qg - Gate Charge	53 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	139 W	Channel Mode	Enhancement
Tradename	QFET	Series	FQP19N20C
Fall Time	115 ns	Forward Transconductance - Min	10.8 S
Height	16.3 mm	Length	10.67 mm
Product Type	MOSFET	Rise Time	150 ns
Factory Pack Quantity	1000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	135 ns	Typical Turn-On Delay Time	15 ns
Width	4.7 mm	Part # Aliases	FQP19N20C_NL
Unit Weight	0.068784 oz