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High Voltage N-Channel MOSFET
TO-220-3Manufacturer:
Mfr.Part #:
FQP5N60C
Datasheet:
Pbfree Code:
Yes
Part Life Cycle Code:
End Of Life
Reach Compliance Code:
not_compliant
ECCN Code:
EAR99
EDA/CAD Models:
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The FQP5N60C MOSFET, manufactured by ON Semiconductor, showcases the latest advancements in power semiconductor technology. With its proprietary planar stripe and DMOS technology, this N-Channel enhancement mode MOSFET offers superior performance in terms of reduced on-state resistance and enhanced switching capabilities. Its high avalanche energy strength makes it a top choice for applications like switched mode power supplies, active power factor correction, and electronic lamp ballasts. Designers and engineers can rely on the FQP5N60C to deliver efficient power management and high reliability in a wide range of electronic systems
Source Content uid | FQP5N60C | Pbfree Code | Yes |
Part Life Cycle Code | End Of Life | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 100 Weeks, 5 Days |
Avalanche Energy Rating (Eas) | 210 mJ | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 600 V | Drain Current-Max (ID) | 4.5 A |
Drain-source On Resistance-Max | 2.5 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 100 W | Pulsed Drain Current-Max (IDM) | 18 A |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Finish | MATTE TIN | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Product Category | MOSFET |
REACH | Details | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 600 V |
Id - Continuous Drain Current | 4.5 A | Rds On - Drain-Source Resistance | 2.5 Ohms |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 19 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 100 W |
Channel Mode | Enhancement | Tradename | QFET |
Series | FQP5N60C | Fall Time | 46 ns |
Forward Transconductance - Min | 4.7 S | Height | 16.3 mm |
Length | 10.67 mm | Product Type | MOSFET |
Rise Time | 42 ns | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | MOSFET | Typical Turn-Off Delay Time | 38 ns |
Typical Turn-On Delay Time | 10 ns | Width | 4.7 mm |
Part # Aliases | FQP5N60C_NL | Unit Weight | 0.068784 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Quality Guarantee
We promise to provide 365 days quality assurance service for all our products.
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.890 | $0.89 |
10+ | $0.741 | $7.41 |
50+ | $0.666 | $33.30 |
100+ | $0.593 | $59.30 |
500+ | $0.548 | $274.00 |
1000+ | $0.525 | $525.00 |
The prices below are for reference only.