This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

FQP6N80C +BOM

Power transistor with N-channel enhancement mode for high voltage applications

Manufacturer:

onsemi
Mfr.Part #:

FQP6N80C
Datasheet:

FQP6N80C Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FQP6N80C

FQP6N80C General Description

The FQP6N80C N-Channel power MOSFET from ON Semiconductor features state-of-the-art planar stripe and DMOS technology, enabling it to offer unmatched performance in various power applications. With a focus on reducing on-state resistance and enhancing switching capabilities, this MOSFET is a top choice for applications like switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Its high avalanche energy strength ensures reliable operation even under challenging conditions, making it a reliable solution for critical power management needs

Key Features

Achieve high-speed switching
Low power consumption ensured
Fast turn-off capability guaranteed
Compact design for space-saving
High surge current handling capability
Precise temperature control available

Application

Energy
Telecommunications
Real Estate

Specifications

Source Content uid	FQP6N80C	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	28 Weeks
Application	SWITCHING	Configuration	SINGLE WITH BUILT-IN DIODE
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-220AB
JESD-30 Code	R-PSFM-T3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	N-CHANNEL	Surface Mount	NO
Terminal Finish	MATTE TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Element Material	SILICON