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FQP90N10V2 Image

FQP90N10V2 TO-220-3

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FQP90N10V2 +BOM

FQP90N10V2: Next-Generation N-Channel MOSFET for Advanced Voltage Control

Manufacturer:

onsemi
Mfr.Part #:

FQP90N10V2
Datasheet:

FQP90N10V2 Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
Current - Continuous Drain (Id) @ 25°C:

90A (Tc)
EDA/CAD Models:

Request Free CAD Models for FQP90N10V2

FQP90N10V2 General Description

N-Channel 100 V 90A (Tc) 250W (Tc) Through Hole TO-220-3

Key Features

71A, 80V, RDS(on) = 0.016Ω @VGS = 10 V
Low gate charge ( typical 84 nC)
Low Crss ( typical 200 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	10mOhm @ 45A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	191 nC @ 10 V
Vgs (Max)	±30V	Input Capacitance (Ciss) (Max) @ Vds	6150 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	250W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole

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FQP90N10V2

onsemi

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TO-220-3

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