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FQPF33N10 +BOM

100V 18A N-Channel Transistor FQPF33N10, TO-220F Package, Suitable for Rail Mounting

Manufacturer:

onsemi
Mfr.Part #:

FQPF33N10
Datasheet:

FQPF33N10 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

End Of Life
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FQPF33N10

FQPF33N10 General Description

The FQPF33N10 power MOSFET represents the latest in semiconductor technology, providing unmatched performance and versatility. Its proprietary planar stripe and DMOS design ensure optimal power efficiency and durability, making it the perfect choice for demanding applications. With superior switching performance and high avalanche energy strength, the FQPF33N10 is a reliable solution for a wide range of power-related tasks

Key Features

Low input capacitance
Tj(max) = 150°C
Avalanche tested
80% duty cycle tolerance

Application

Camera
Drone
Action cam

Specifications

Source Content uid	FQPF33N10	Pbfree Code	Yes
Part Life Cycle Code	End Of Life	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	4 Weeks
Avalanche Energy Rating (Eas)	430 mJ	Case Connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	18 A	Drain-source On Resistance-Max	0.052 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	41 W	Pulsed Drain Current-Max (IDM)	72 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	MATTE TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON