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00V semiconductor device
TO-220-3Manufacturer:
Mfr.Part #:
FQPF6N90
Datasheet:
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
900 V
Current - Continuous Drain (Id) @ 25°C:
3.4A (Tc)
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N-Channel 900 V 3.4A (Tc) 56W (Tc) Through Hole TO-220F-3
3.4A, 900V, RDS(on) = 1.9 @VGS = 10 V
Low gate charge ( typical 40 nC)
Low Crss ( typical 17 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900 V | Current - Continuous Drain (Id) @ 25°C | 3.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 1.9Ohm @ 1.7A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
Vgs (Max) | ±30V | Input Capacitance (Ciss) (Max) @ Vds | 1880 pF @ 25 V |
FET Feature | - | Power Dissipation (Max) | 56W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
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